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APT10M19BVFR APT10M19SVFR 100V 75A 0.019 POWER MOS V(R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. BVFR D3PAK TO-247 SVFR * Faster Switching * Lower Leakage * Avalanche Energy Rated * FAST RECOVERY BODY DIODE G S D * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT10M19BVFR_SVFR UNIT Volts Amps 100 75 300 30 40 370 2.96 -55 to 150 300 75 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 100 0.019 250 1000 100 2 4 (VGS = 10V, ID = 37.5A) Ohms A nA Volts 6-2004 050-5606 Rev B Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10M19BVFR_SVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 50V ID = 75A @ 25C VGS = 15V VDD = 50V ID = 75A @ 25C RG = 1.6 MIN TYP MAX UNIT 5100 1900 800 200 40 92 16 40 50 20 6120 2660 1200 300 60 140 32 80 75 40 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns C Amps 75 300 1.3 5 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = -75A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -75A, di/dt = 100A/s) Reverse Recovery Charge (IS = -75A, di/dt = 100A/s) Peak Recovery Current (IS = -75A, di/dt = 100A/s) 200 350 0.5 1.0 8 12 THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.34 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 0.53mH, RG = 25, Peak IL = 75A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID75A di/dt 700A/s VR 100V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.4 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 PDM 6-2004 0.01 0.005 0.02 0.01 SINGLE PULSE Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 050-5606 Rev B Z JC 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 10 Typical Performance Curves 200 ID, DRAIN CURRENT (AMPERES) VGS=9V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 200 APT10M19BVFR_SVFR VGS=15V 10V 9V 8V 160 8V 160 120 7V 80 6.5V 6V 40 5.5V 5V 4.5V 0 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55C TJ = +25C TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 7V 80 6.5V 6V 40 5.5V 5V 4.5V 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS NORMALIZED TO = 10V @ 0.5 I [Cont.] D RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 125 ID, DRAIN CURRENT (AMPERES) 2.00 V GS 100 1.80 1.60 1.40 1.20 1.00 0.80 VGS=10V 75 50 TJ = +125C TJ = +25C 0 TJ = -55C 25 VGS=20V 0 50 100 150 200 250 300 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 80 0 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 60 1.10 1.05 40 1.00 20 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 I D = 0.5 I V GS D [Cont.] 1.2 1.1 1.0 0.9 0.8 0.7 0.6 = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -50 -25 050-5606 Rev B 6-2004 APT10M19BVFR_SVFR 300 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 100S 15,000 10,000 C, CAPACITANCE (pF) 100 50 1mS 5,000 Ciss Coss 10mS 10 5 100mS TC =+25C TJ =+150C SINGLE PULSE DC Crss 1,000 1 1 5 10 50 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 500 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 = 0.5 I D [Cont.] 200 100 50 TJ =+150C TJ =+25C 16 VDS=20V VDS=50V 12 VDS=80V 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 TO-247 Package Outline (BVFR) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline (SVFR) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 13.79 (.543) 13.99 (.551) 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 2.40 (.094) 2.70 (.106) 6-2004 (Base of Lead) 1.01 (.040) 1.40 (.055) 050-5606 Rev B Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 Source Drain Gate Dimensions in Millimeters (Inches) 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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